Japanese

Takayuki  HASEGAWA

    Lecturer (full time)

    Applied Physics, Faculty of Engineering
    OSAKA INSTITUTE OF TECHNOLOGY
    5-16-1 Omiya, Asahi-ku, Osaka, 535-8585, Japan
  


Research Area
Optical properties of semiconductor nano- and microstructures
  • Ultrafast carrier dynamics and terahertz-range electromagnetic radiation
  • Polaritons in semiconductor microcavities
  • Development of spectroscopic techniques
    
Education
2008. 9       Ph. D. in Engineering, Department of Applied physics, Osaka city university
2006. 3       M.S. in Engineering, Department of Applied physics, Osaka city university
2004. 3       B.S. in Science, Faculty of Science, Konan university

Professional Experience
2020. 4 - Present     Lecturer (full time), Applied Physics, Faculty of Engineering,
                                 Osaka Institute of Technology
2008. 10 - 2020.3     Assistant Professor, Graduate School of Material Science,
                                 University of Hyogo
2018. 4 - 2021. 3      Part-time instructor, Faculty of Science and Engineering,
                                 Konan University
2008. 4 - 2008. 9      Research Fellow of Japan Society for the Promotion of Science
2006. 4 - 2008. 9      Part-time instructor, Faculty of Engineering,
                                 Osaka Institute of Technology

Selected Papers  (Publication list)

Electric field dependence of terahertz wave emission in temperature-controlled GaAs epitaxial films Appl. Phys. Express 15, 051001 (2022). [IOP]


Characteristics of terahertz wave emissions under the coexistence of different sub-picosecond
transient phenomena in GaAs epitaxial films, Appl. Phys. Express 14, 041005 (2021). [IOP]


Ultrafast dynamics of coherent optical phonon correlated with the antiferromagnetic
transition in a hexagonal YMnO3 epitaxial film, Appl. Phys. Lett. 111, 192901 (2017). [AIP]

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